EU 2AV1

STPSC10065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A K K K K A A NC K TO-220AC D²PAK Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Features         The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability PPAP capable Operating Tj from -40 °C to 175 °C ECOPACK®2 compliant component November 2017 Table 1: Device summary DocID030728 Rev 3 This is information on a product in full production. Symbol Value IF(AV) 10 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V 1/12 www.st.com Characteristics 1 STPSC10065-Y Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Value Unit 650 V 22 A 10 A A Tj from -40 °C to 175 °C °C(1), IF(AV) Average forward current TC = 150 IFRM Repetitive peak forward current Tc = 150 °C, Tj = 175 °C, δ = 0.1 42 tp = 10 ms sinusoidal, Tc = 25 °C 48 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 125 °C 39 tp = 10 µs square, Tc = 25 °C 210 Tstg DC current Storage temperature range Operating junction Tj temperature(2) A -65 to +175 °C -40 to +175 °C Notes: (1)Value (2)(dP based on Rth(j-c) max. tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Value Symbol Rth(j-c) Parameter Unit Typ. Max. 1.0 1.5 Junction to case °C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Tj = 150 °C VR = VRRM Tj = 25 °C Tj = 150 °C IF = 10 A Tj = 175 °C Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.97 x IF(AV) + 0.068 x IF2(RMS) 2/12 DocID030728 Rev 3 Min. Typ. Max. - 7 130 - 53 900 - 1.30 1.45 - 1.45 1.65 - 1.50 Unit µA V STPSC10065-Y Characteristics Table 5: Dynamic electrical characteristics Symbol QCj(1) Cj Parameter Test conditions Total capacitive charge Total capacitance Typ. Unit VR = 400 V 34 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 670 VR = 400 V, Tc = 25 °C, F = 1 MHz 55 pF Notes: (1)Most 𝑉 accurate value for the capacitive charge: 𝑄𝑐𝑗 (𝑉𝑅 ) = ∫0 𝑅 𝐶𝑗 (𝑉)𝑑𝑉 DocID030728 Rev 3 3/12 Characteristics 1.1 STPSC10065-Y Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values) 20 Figure 2: Reverse leakage current versus reverse voltage applied (typical values) IF(A) 1.E+02 IR(µA) Tj = 175 °C Pulse test : tp = 500 µs 18 Tj = 150 °C 1.E+01 16 14 Ta = 100 °C 12 10 1.E+00 Ta = 150 °C Ta = 25 °C Ta = 175 °C 8 1.E-01 Tj = 25 °C 6 1.E-02 4 2 Ta = -40 °C VF(V) VR(V) 0 1.E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 Figure 3: Peak forward current versus case temperature 80 700 T δ =tp/T 100 150 200 250 300 350 400 450 500 550 600 650 Figure 4: Junction capacitance versus reverse voltage applied (typical values) IM (A) δ = 0.1 50 tp 60 Cj (pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 600 500 δ = 0.3 400 δ = 0.5 300 40 200 20 δ = 0.7 δ= 1 100 TC(°C) VR(V) 0 0 0 25 50 75 100 125 150 175 0.1 Zth(j-c) /Rth(j-c) 10.0 100.0 1000.0 Figure 6: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration 1.0 1.0 1.E+03 IFSM(A) 0.9 0.8 0.7 Ta = 25 °C 0.6 0.5 1.E+02 Ta = 125 °C 0.4 0.3 0.2 Single pulse 0.1 0.0 1.E-05 4/12 t p(s) t p(s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 DocID030728 Rev 3 1.E-04 1.E-03 1.E-02 STPSC10065-Y Characteristics Figure 7: Total capacitive charges versus reverse voltage applied (typical values) 35 QCj(nC) Figure 8: Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 35 µm) Rth(j-a) (°C/W) 80 D²PAK 30 70 25 60 20 50 40 15 30 10 20 5 10 VR(V) 0 0 50 100 150 200 250 300 350 400 SCu(cm²) 0 0 DocID030728 Rev 3 5 10 15 20 25 30 35 5/12 40 Package information 2 STPSC10065-Y Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     2.1 Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.7 N·m TO-220AC package information Figure 9: TO-220AC package outline 6/12 DocID030728 Rev 3 STPSC10065-Y Package information Table 6: TO-220AC package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M ØI 2.6 typ. 3.75 0.102 typ. 3.85 DocID030728 Rev 3 0.147 0.151 7/12 Package information 2.2 STPSC10065-Y D²PAK package information Figure 10: D²PAK package outline 8/12 DocID030728 Rev 3 STPSC10065-Y Package information Table 7: D²PAK package mechanical data Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 7.75 8.00 0.295 0.305 0.315 D2 1.10 1.30 0.051 0.060 E 10 E1 8.50 E2 6.85 e 1.50 0.043 10.40 0.394 8.70 8.90 0.335 0.343 0.346 7.05 7.25 0.266 0.278 0.282 2.54 0.409 0.100 e1 4.88 5.28 0.190 0.205 H 15 15.85 0.591 0.624 J1 2.49 2.69 0.097 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.049 0.055 L2 1.30 1.75 0.050 0.069 R V2 0.4 0° 0.015 8° DocID030728 Rev 3 0° 8° 9/12 Package information STPSC10065-Y Figure 11: D²PAK recommended footprint (dimensions are in mm) 10/12 DocID030728 Rev 3 STPSC10065-Y 3 Ordering information Ordering information Table 8: Ordering information Order code 4 Marking Package Weight Base qty. Delivery mode STPSC10065DY PSC10065DY TO-220AC 1.86 g 50 Tube STPSC10065GY-TR PSC10065GY D²PAK 1.48 g 1000 Tape and reel Revision history Table 9: Document revision history Date Revision Changes 13-Jun-2017 1 First issue. 18-Jul-2017 2 Updated Table 4: "Static electrical characteristics". 09-Nov-2017 3 Added D²PAK package. DocID030728 Rev 3 11/12 STPSC10065-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 12/12 DocID030728 Rev 3